Influence of high-energy alpha-particle irradiation on the spectral and defect properties of a Si photovoltaic detector

Semiconductor Science and Technology

Volumn 14, Issue 4, 1999, Pages 323-326

  Goodman, S A ^a   Auret, F D ^a   Du Plessis, M ^b   Meyer, W E ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b Solid State Technology   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC VARIABLES MEASUREMENT; ENERGY GAP; LEAKAGE CURRENTS; SEMICONDUCTING SILICON;

ALPHA-PARTICLE IRRADIATION; PHOTOVOLTAIC DETECTORS;

SEMICONDUCTOR DEVICES;

EID: 0032656197     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/4/006     Document Type: Article

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