Effects of energy deposition by nuclear scattering in silicon p-i-n diode detectors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 135, Issue 1-4, 1998, Pages 523-531

  Whitlow, Harry J ^a   Roosendaal, Sander J ^a,d   El Bouanani, Mohamed ^a,b   Ghetti, Roberta ^c   Johnston, Peter N ^a,b   Jakobsson, Bo ^c   Hellborg, Ragnar ^a   Petersson, Håkan ^a   Omling, Per ^a   Wang, Zhanguo ^a,e  

^a LUND INSTITUTE OF TECHNOLOGY   (Sweden)

^b RMIT UNIVERSITY   (Australia)

^c LUND UNIVERSITY   (Sweden)

^d UTRECHT UNIVERSITY   (Netherlands)

^e INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Leakage current; Nuclear stopping; P i n diodes; Radiation damage; Si charged particle detectors

Indexed keywords

ALPHA PARTICLES; COPPER; DEEP LEVEL TRANSIENT SPECTROSCOPY; ION BOMBARDMENT; LEAKAGE CURRENTS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES;

NUCLEAR STOPPING;

PARTICLE DETECTORS;

EID: 0032472721     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00632-0     Document Type: Article

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