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Volumn 44, Issue 6 PART 1, 1997, Pages 2169-2173

Proton displacement damage and ionizing dose for shielded devices in space

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; PROTONS; RADIATION EFFECTS; RADIATION SHIELDING;

EID: 0031341063     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.659032     Document Type: Article
Times cited : (64)

References (14)
  • 1
    • 0029208261 scopus 로고    scopus 로고
    • "Displacement Damage Analogs to Ionizing Radiation Effects"
    • vol. 24, pp. 1-7, 1995.
    • O.P. Summers, E. A. Burke, and M. A. Xapsos, "Displacement Damage Analogs to Ionizing Radiation Effects", Radiation Measurements, vol. 24, pp. 1-7, 1995.
    • Radiation Measurements
    • Summers, O.P.1    Burke, E.A.2    Xapsos, M.A.3
  • 2
    • 0027844647 scopus 로고    scopus 로고
    • Damage Correlations in Semiconductors Exposed to Gamma, Electron, and Proton Irradiations"
    • vol. 40, pp.1372-1379, 1993.
    • O.P. Summers, E.A. Burke, P. Shapiro, S.R. Messenger, and R.J. Walters, Damage Correlations in Semiconductors Exposed to Gamma, Electron, and Proton Irradiations", IEEE Trans. Nucl Sei., vol. 40, pp.1372-1379, 1993.
    • IEEE Trans. Nucl Sei.
    • Summers, O.P.1    Burke, E.A.2    Shapiro, P.3    Messenger, S.R.4    Walters, R.J.5
  • 6
    • 0022890049 scopus 로고    scopus 로고
    • Energy Dependence of Proton-Induced Displacement Damage in Silicon"
    • vol. 33, pp.1276-1282, 1986.
    • E.A. Burke, Energy Dependence of Proton-Induced Displacement Damage in Silicon", IEEE Trans. Nucl. Sei., vol. 33, pp.1276-1282, 1986.
    • IEEE Trans. Nucl. Sei.
    • Burke, E.A.1
  • 7
    • 34648865085 scopus 로고    scopus 로고
    • 2.5, Severn Communications Corporation: Eugene, OR, 1994.
    • J.R. Letaw, Space Radiation, Version 2.5, Severn Communications Corporation: Eugene, OR, 1994.
    • Space Radiation, Version
    • Letaw, J.R.1
  • 12
    • 34648860062 scopus 로고    scopus 로고
    • A detailed description of the displacement damage dose model as applied to GaAs/Ge solar cells is given in Reference [3].
    • A detailed description of the displacement damage dose model as applied to GaAs/Ge solar cells is given in Reference [3].


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.