Pion and proton induced radiation damage to silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 276-283

  Riechmann, K ^a,b   Knopfle K T ^a   Pugatch, V M ^a,c  

^a MAX PLANCK INSTITUT FÜR KERNPHYSIK   (Germany)

^b MAX PLANCK INSTITUT FÜR PHYSIK   (Germany)

^c INSTITUTE FOR NUCLEAR RESEARCH   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; IONS; IRRADIATION; LEAKAGE CURRENTS; OPTIMIZATION; PARTICLE DETECTORS; PROTONS; SEMICONDUCTING SILICON; TEMPERATURE;

DEDUCED DAMAGE PARAMETERS; FULL DEPLETION VOLTAGES; HERA B SILICON VERTEX DETECTOR SYSTEM; PION; SILICON DETECTORS;

RADIATION DAMAGE;

EID: 0030216438     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(95)01408-X     Document Type: Article

References (7)

1. T. Lohse et al., HERA-B Proposal, DESY-PRC 94/02.
2. M. Huhtinen and P. Aarnio, Nucl. Instr. and Meth. A 335 (1993) 580.
3. +- irradiation facility, CERN-ECP/95-02.
4. H.J. Ziock et al., Nucl. Instr. and Meth. A 342 (1994) 96.
5. S.J. Bates et al., Damage induced by pions in silicon detectors, CERN-ECP/95-03.
6. P.A. Aarnio et al., Nucl. Instr. and Meth. A 360 (1995) 521.
7. J. Matheson et al., A microscopic explanation for type inversion and the annealing behaviour of radiation damaged silicon detectors, Technical Note RD20/TN/95/43, and contribution to this Conference (7th Europ. Symp. on Semiconductor Detectors, Schloss Elmau, Bavaria, Germany, 1995).