The (√3×√3)R30°-reconstructed 6H-SiC(000l): A semiconducting surface

Surface Review and Letters

Volumn 5, Issue 1, 1998, Pages 193-197

  Forbeaux, I ^a   Themlin, J M ^a   Langlais, V ^a   Yu, L M ^b   Belkhir, H ^a   Debever, J M ^a  

^a CNRS   (France)

^b UNIVERSITY OF NAMUR   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000409235     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0218625x98000360     Document Type: Article

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