A photoemission study of 4H-SiC(0001)

Surface Science

Volumn 360, Issue 1-3, 1996, Pages

  Johansson, L I ^a   Owman, Fredrik ^a   Mårtensson, Per ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Silicon carbide; Single crystal surfaces; Soft x ray photoelectron spectroscopy; Surface reconstruction and segregation

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; CRYSTAL ORIENTATION; GRAPHITE; PHOTOEMISSION; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACE STRUCTURE; SYNCHROTRON RADIATION; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

SOFT X RAY PHOTOELECTRON SPECTROSCOPY; SURFACE RECONSTRUCTION; SURFACE SEGREGATION;

SILICON CARBIDE;

EID: 0030192302     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00702-9     Document Type: Article

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25. Results are presented when Lorentzian widths of 0.15 eV and 0.30 eV for the Si 2p and C 1s were selected. A branching ratio of 0.5 and a spin orbit split of 0.602 eV was used for the Si 2p doublet. Asymmetry parameter values of 0, 0.1 and 0.03 were found to produce best fits to spectra recorded from, respectively, the √3, the mixed √3 and 6√3, and the 6√3 surface. The Gaussian width of each component was allowed to vary independently. Best fits were obtained at Gaussian widths very similar to the ones obtained previously for 6H-SiC(0001) (see Ref. [16]). For the √3 surface the shift for both the Si 2p and the C 1s level was extracted from spectra recorded using six different photon energies and the maximum deviation obtained is given in parentheses.