Thermal oxidation of (100) silicon in O2 and CO2 and its effect on the SiO2-Si metal oxide semiconductor parameters

Journal of the Electrochemical Society

Volumn 144, Issue 3, 1997, Pages 1137-1143

  Khemka, V ^a,b   Chow, T P ^a,b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CABOOSES; CAPACITANCE MEASUREMENT; MOS DEVICES; OXYGEN; THERMOOXIDATION; THIN FILMS; VOLTAGE MEASUREMENT;

GATE OXIDES; THRESHOLD VOLTAGE;

SEMICONDUCTING SILICON;

EID: 0031102833     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837546     Document Type: Article

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