Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 358-364

  Kimoto, T ^a   Takemura, O ^a   Matsunami, H ^a   Nakata, T ^b   Inoue, M ^b  

^a KYOTO UNIVERSITY   (Japan)

^b Ion Eng Res Institute Corporation   (Japan)

Author keywords

Acceptor doping; Electrical activation; Ion implantation; Pn junction diode; Silicon carbide

Indexed keywords

EID: 0000553547     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0415-6     Document Type: Article

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