The characterization of SiC hot-implanted with Ga+

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 713-716

  Tanaka, Y ^a   Kobayashi, N ^a   Hasegawa, M ^a   Yoshida, S ^a   Ishida, Y ^a   Nishijima, T ^a   Hayashi, N ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Gallium; Hot Implantation; RBS Channeling; Recrystallization

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL LATTICES; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

HOT IMPLANTATION; MULTIPLE ENERGY IMPLANTATION TECHNIQUE;

SILICON CARBIDE;

EID: 0031674149     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (12)

1. Addamiano, G.W. Anderson, J. Comas, H.L. Hughes and W. Lucke, J. Electrochem. Soc. 119,1355(1972).
2. M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer, W. Hennessy, D.L. Polla and H. Bakhru, IEEE Trans. Electron. Devices 13,639(1992).
3. G. Pensl, R. Helbig, H. Zhang, G. Ziegler and P. Lanig, Mat. Res. Soc. Symp. Proc. 97,195(1987).
4. A. Suzuki, K. Furukawa, Y. Fujii, M. Shigeta and S. Nakajima, "Amorphous and Crystalline Silicon Carbide III", Springer-Verlag, 1992, p101.
5. O.J. Marsh, "Silicon Carbide 1973", University of South Carolina Press, Columbia, 1974, p.471.
6. V.M. Gusev, K.D. Demakov, M.G. Kosaganova, M.B. Reifman and V.G. Stolyarova, Sov. Phys. Semicond. 9,820((1976).
7. W. Lucke, J. Comas, G. Hubler and K. Dunnig, J. Appl. Phys. 46,994(1975).
8. H. Itoh, Y. Aoki, T. Ohshima, M. Yoshikawa, I. Nashiyama, H. Okumura and S. Yoshida, "Characterization of defects in hot-implanted 3C-SiC epitaxially grown on Si", presented at the International Conference on SiC and Related Materials, Kyoto, Japan, September 18-21, 1995.
9. R.E. Avila, J.J. Kopanski and C.D. Fung, J. Appl. Phys. 62,3469(1987).
10. K.K. Burdel, A. V. Suvorov and N.G. Chechenin, Sov. Phys. Solid State 32,975(1990).
11. A.F. Tulinov, N.G. Chechenin, K.K. Bourdelle, V.N. Makarov and A. V. Suvorov, Nucl. Instrum. and Methods B33,788(1988).
12. th Symposium on Materials Science and Engineering 41(1996)