Gallium implantation induced deep levels in n-type 6H-SIC

Journal of Applied Physics

Volumn 85, Issue 1, 1999, Pages 105-107

  Gong, M ^a   Fung, S ^a   Beling, C D ^a   Brauer, G ^b   Wirth, H ^b   Skorupa, W ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343549044     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369428     Document Type: Article

References (9)

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