Theoretical calculation of normally-off gaas mesfet characteristics including effects of surface depletion layer

Japanese Journal of Applied Physics

Volumn 21, Issue 2 A, 1982, Pages L77-L79

  Hariu, Takashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MESFETS; SEMICONDUCTING GALLIUM ARSENIDE;

TRANSISTORS, FIELD EFFECT;

EID: 0020088354     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.21.L77     Document Type: Article

References (6)

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2. W. Schockley: Proc. IRE 40 (1952) 1365.
3. K. Lehovec and R. Zuleeg: Solid State Electron. 13 (1970) 1415.
4. N. Toyoda, M. Mochizuki, T. Mizoguchi and A. Hojo: Pap. Tech. Group on Electron Devices of IECE Jpn. ED80-126 (1981) [in Japanese].
5. P. L. Hower and G. Bechtel: IEEE Trans. Electron Devices ED-20 (1973) 213.
6. M. Ino, K. Kurumada and M. Ohmori: Pap. Tech. Group on Electron Devices of IECE Jpn. ED80-125 (1981) [in Japanese].