Heterostructure FET Model Including Gate Leakage

IEEE Transactions on Electron Devices

Volumn 37, Issue 10, 1990, Pages 2267-2270

  Ruden, P Paul ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES--NUMERICAL ANALYSIS; SEMICONDUCTING GALLIUM ARSENIDE;

GATE LEAKAGE; TRANSCONDUCTANCE;

TRANSISTORS, FIELD EFFECT;

EID: 0025508376     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.59919     Document Type: Article

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