Suppression of temperature sensitivity of interband emission energy in 1.3-μm-region by an InGaAs overgrowth on self-assembled InGaAs/GaAs quantum dots

Applied Physics Letters

Volumn 74, Issue 26, 1999, Pages 3963-3965

  Mukai, Kohki ^a   Sugawara, Mitsuru ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; STRAIN; STRESS CONCENTRATION; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

INTERBAND EMISSION ENERGY; QUANTUM DOT LASERS; SELF ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032620890     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124237     Document Type: Article

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