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Volumn 129, Issue 11, 1982, Pages 2594-2597

A Viscous Flow Model to Explain the Appearance of High Density Thermal Si02 at Low Oxidation Temperatures

Author keywords

annealing; oxidation; stress

Indexed keywords

SEMICONDUCTING SILICON - OXIDATION;

EID: 0020205589     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2123617     Document Type: Article
Times cited : (206)

References (26)
  • 13
    • 0017534649 scopus 로고
    • W. A. Pliskin, J. Vac. Sei. TechnOl., 14, 1064 (1977); W. A. Pliskin and H. S. Lehman, Journal of the Electrochemical Society. 112,1013 (1965).
    • (1977) J. Vac. Sei. TechnOl. , vol.14 , pp. 1064
    • Pliskin, W.A.1
  • 26
    • 84978565342 scopus 로고
    • H. M. Cohen and R. Roy, J. Am. Ceram. Soc., 44, 523 (1961) ; H. M. Cohen and R. Roy, Phys. Chem. Glasses, 6,149 (1965).
    • (1961) J. Am. Ceram. Soc. , vol.44 , pp. 523
    • Cohen, H.M.1    Roy, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.