Intrinsic strain in SiO2 thin films

Journal of Applied Physics

Volumn 83, Issue 2, 1998, Pages 786-792

  Delph, T J ^a  

^a Lehigh University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4444307840     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366759     Document Type: Article

References (25)

1. N. F. Mott, Proc. R. Soc. London. Ser. A 376, 207 (1981).
2. A. Ourmazd, D. W. Taylor, J. A. Rentschler, and J. Bevk, Phys. Rev. Lett. 59, 213 (1987).
3. A. Pasquarello, M. Hybertsen, and R. Car, Phys. Rev. Lett. 74, 1024 (1995).
4. M. E. Law, C. S. Rafferty, and R. W. Dutton, SUPREM-IV User's Manual (Stanford University, Stanford, 1988).
5. J. P. Peng, D. Chidambarrao, and G. R. Srinivasan, Int. J. Comp. Math. Election. Eng. 10, 341 (1991).
6. V. Senez, D. Collard, B. Baccus, M. Brault, and J. Lebailly, J. Appl. Phys. 76, 3285 (1994).
7. E. P. EerNisse, Appl. Phys. Lett. 35, 8 (1979).
8. E. Kobeda and E. A. Irene, J. Vac. Sci. Technol. B 4, 720 (1986).
9. E. P. Kobeda and E. A. Irene, J. Vac. Sci. Technol. B 6, 574 (1988).
10. H. Z. Massoud, J. D. Plummer, and E. A. Irene, J. Electrochem. Soc. 132, 1745 (1985).
11. G. G. Stoney, Proc. R. Soc. London, Ser. A 82, 172 (1909).
12. A. C. Ugural and L. J. Broutman, Analysis and Performance of Fiber Composites (Wiley, New York, 1980).
13. P. Sutardja and W. G. Oldham, IEEE Trans. Electron Devices ED-36, 2415 (1989).
14. C. S. Rafferty, L. Burucki, and R. W. Dutton, Appl. Phys. Lett. 54, 1516 (1989).
15. C. S. Rafferty, Ph.D. thesis, Stanford University. 1991.
16. D.-B. Kao, J. P. McVittie, W. D. Nix, and K. C. Sarasat, IEEE Trans. Electron Devices ED-34, 1008 (1987).
17. G. Hetherington, K. H. Jack, and J. C. Kennedy, Phys. Chem, Glasses 5, 130 (1964).
18. W. A. Brantley, J. Appl. Phys. 44, 534 (1973).
19. S. Spinner, J. Am. Ceram. Soc. 45, 394 (1962).
20. C. B. Masters and N. J. Salamon, Int. J. Eng. Sci. 31, 915 (1993).
21. B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1968).
22. D.-B. Kao, J. P. VcVittie, W. D. Nix, and K. C. Saraswat, IEEE Trans. Electron Devices ED-35, 25 (1988).
23. E. H. Lee and T. Wierzbicki, J. Appl. Mech. 34, 931 (1967).
24. C. S. Rafferty and R. W. Dutton, Appl. Phys. Lett. 54, 1815 (1989).
25. T. Y. Fan and U. Gösele, Appl. Phys. Lett. 39, 86 (1981).