On modelling thermal oxidation of Silicon I: Theory

International Journal for Numerical Methods in Engineering

Volumn 47, Issue 1-3, 2000, Pages 341-358

  Rao, Vinay S ^a,c   Hughes, Thomas J R ^a,b  

^a STANFORD UNIVERSITY   (United States)

^b Stanford University   (United States)

^c SCHLUMBERGER CAMBRIDGE RESEARCH   (United Kingdom)

Author keywords

Balance laws; Continuum mechanics; Diffusion; Reaction; Thermal oxidation; Viscoelasticity

Indexed keywords

DEFORMATION; DIFFUSION IN SOLIDS; EQUATIONS OF MOTION; INTERFACES (MATERIALS); SILICA; SILICON; THERMODYNAMICS; THERMOOXIDATION; VISCOELASTICITY;

BALANCE LAWS; CONTINUUM MECHANICS;

MATHEMATICAL MODELS;

EID: 0033881843     PISSN: 00295981     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1097-0207(20000110/30)47:1/3<341::AID-NME774>3.0.CO;2-Z     Document Type: Article

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