Full quantummechanical treatment of charge leakage in MOS capacitors with ultra-thin oxide layers

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 248-251

  Magnus, Wim ^a   Schoenmaker, Wim ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC DEVICES; SEMICONDUCTING SILICON;

CHANNEL ELECTRONS; CONDUCTION CHANNEL; ENERGY SPECTRA; LAYERED STRUCTURES; QUANTUM MECHANICAL; QUANTUM-MECHANICAL TREATMENTS; SUBSTRATE REGIONS; ULTRA-THIN OXIDE LAYERS;

MOS CAPACITORS;

EID: 84907898832     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M. J. van Dort, P. H. Woerlee and A. J. Walker, "A Simple Model for Quantization Effects in Heavily-Doped Silicon MOS-FEJ's at Inversion Conditions", Solid-St. Electron. 37, pp. 411-414 (1994).
2. J. A. Lopez-Villanueva, J. Melchior, F Gamiz, J. Banqueri and 1. A. limenez-Tejada, "A model for the quantized accumulation layer in metal-insulator-semiconductor structures", Solid-St. Electron. 38, pp. 203-210 (1995).
3. W Magnus, C. Sala and K. De Meyer, "Quantized energy levels in Si inversion layers: A sinplified self-consistent approach", 1. Appl. Phys. 63, 2704 (1988).
4. R. Feynman, "Statistical Mechanics", W. A. Benjamin, Reading Massachusetts, pp 67-71.