Plasma processed ultra-thin SiO2 interfaces for advanced silicon NMOS and PMOS devices: Applications to Si-oxide/Si oxynitride, Si-oxide/Si nitride and Si-oxide/transition metal oxide stacked gate dielectrics

Thin Solid Films

Volumn 374, Issue 2, 2000, Pages 217-227

  Lucovsky, Gerald ^a,b   Yang, Hanyang ^a   Wu, Yider ^a   Niimi, Hiroake ^a  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEPOSITION; DIELECTRIC MATERIALS; FILM GROWTH; FILM PREPARATION; INTERFACES (MATERIALS); MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICA; ULTRATHIN FILMS;

SEMICONDUCTOR DIELECTRIC INTERFACES; STACKED GATE DIELECTRICS;

SEMICONDUCTING FILMS;

EID: 0034291090     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01153-6     Document Type: Article

References (36)

1. Lucovsky G., Kim S.S., Tsu D.V., Fountain G.G., Markunas R.J. J. Vac. Sci. Technol. B. 7:1989;861.
2. Kim S.S., Lucovsky G. J. Vac. Sci. Technol. A. 8:1990;2039.
3. Yasuda T., Ma Y., Habermehl S., Lucovsky G. Appl. Phys. Lett. 60:1992;434.
4. Lucovsky G. IBM J. Res. Dev. 43:1999;301. and refs therein.
5. Lucovsky G., Wortman J.J., Yasuda T., Xu X.-L., Misra V., Hattangady S.V., Ma Y., Hornung B. J. Vac. Sci. Technol. B. 12:1994;2839.
6. Niimi H., Yang H.Y., Lucovsky G. Seiler D.G., Diebold A.C., Bullis W.M., Shaffner T.J., McDonald R., Walters E.J. Characterization and Metrology for ULSI Technology: 1998 International Conference. 1998;273 The American Institute of Physics, Woodbury, NY.
7. Niimi H., Lucovsky G. J. Vac. Sci. Technol. A. 17:1999;3185.
8. Niimi H., Lucovsky G. J. Vac. Sci. Technol. B. 17:1999;2610.
9. Hattangady S.V., Niimi H., Lucovsky G. J. Vac. Sci. Technol. A. 14:1996;3017.
10. Thanikasalam P., Whidden T.K., Ferry D.K. J. Vac. Sci. Technol. B. 14:1996;2840.
11. Lee D.R., Lucovsky G., Denker M.R., Magee C. J. Vac. Sci. Technol. A. 13:1995;607.
12. Lee D.R., Parker C.G., Hauser J.R., Lucovsky G. J. Vac. Sci. Technol. B. 13:1995;1778.
13. Keister J.W., Rowe J.E., Kolodzie J.J., Niimi H., Tao N.-S., Madey T.E., Lucovsky G. J. Vac. Sci. Technol. A. 17:1999;1340.
14. Yang H., Niimi H., Keister J.W., Lucovsky G., Rowe J.E. IEEE Electron Device Lett. 21:2000;76.
15. Hattangady S.V., Niimi H., Lucovsky G. Appl. Phys. Lett. 66:1995;3495.
16. Lucovsky G., Wu Y., Niimi H., Misra V., Phillips J.C. Appl. Phys. Lett. 74:1999;2005.
17. Misra V., Wang Z., Wu Y., Niimi H., Lucovsky G., Wortman J.J., Hauser J.R. J. Vac. Sci. Technol. B. 17:1836;1999.
18. Wu Y., Lucovsky G. Elec. Dev. Lett. EDL. 19:1998;367.
19. H. Yang, G. Lucovsky, IEDM Tech. Dig. 245 (1999).
20. Lucovsky G., Yang H., Niimi H., Thorpe M.F., Phillips J.C. J. Vac. Sci. Technol. B 18:2000;1742.
21. R. Degraeve, B. Kaczer, M. Houssa, G. Groeseneken, M. Hyens, J.S. Jeon, A. Halliyal, IEDM Tech. Dig. 327 (1999).
22. Roy P.K., Kizikyalli I.C. Appl. Phys. Lett. 72:1998;2835.
23. Kizikyalli I.C., Huang R.Y.S., Roy P.K. IEEE Electron Device Lett. 19:1998;423.
24. S.C. Song, H.F. Luan, Y.Y. Chen, M. Gardner, J. Fulford, M. Allen and D.L. Kwong, IEDM Tech. Dig. 373 (1998).
25. Mao A.Y., Son K.A., White J.M., Kwong D.L., Roberts D.A., Vrtis R.N. Mat. Res. Soc. Symp. Proc. 567:1999;473.
26. Weldon M., Queeney K.T., Chabal Y.J., Stetanov B.B., Ragghavachari K. J. Vac. Sci. Technol. B. 17:1999;1795.
27. Lucovsky G., Banerjee A., Hinds B., Claflin B., Koh K., Yang H. J. Vac. Sci. Technol. B. 15:1997;1074.
28. Chen X., Gibson J.M. Appl. Phys. Lett. 70:1997;1462.
29. Thorpe M.F., Jacobs D.J., Chubynsky M.V. J. Non-Cryst. Solids. 266:2000;859.
30. Phillips J.C. J. Non-Cryst Solids. 34:1979;153.
31. Phillips J.C. J. Non-Cryst Solids. 43:1981;37.
32. Lucovsky G., Phillips J.C. J. Non-Cryst. Solids. 227:1998;1221.
33. Phillips J.C. J. Vac. Sci. Technol. B. 17:1803;1999.
34. Selvanath D., Bresser W.J., Boolchand P. Phys. Rev. B 61:2000;15061.
35. Yu T., Tersoff J. Phys. Rev. Lett. 84:2000;4693.
36. 2 Interfaces - 3. 1996;441 The Electrochemical Society, Pennington, NJ.