Radiation tolerance of npn bipolar technology with 30 ghz ft

IEEE Transactions on Nuclear Science

Volumn 47, Issue 3 PART 1, 2000, Pages 654-658

  Flament, O ^a   Synold, S ^a   Pontcharra, J De ^a  

^a CEA DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; DOSIMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; X RAYS;

DOSE RATE; ELECTRICAL PERFORMANCE; ELEVATED TEMPERATURE IRRADIATION; HIGH DOSE LEVEL IRRADIATION; QUASI SELF ALIGNED SINGLE POLYSILICON EMITTER; RADIATION TOLERANCE;

RADIATION DAMAGE;

EID: 0034205097     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.856494     Document Type: Article

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