Ionizing Radiation Tolerance of High-Performance SiGe HBT's Grown by UHV/CVD

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1558-1566

  Babcock, Jeffrey A ^a   Cressler, John D ^b   Vempati, Lakshmi S ^c   Clark, Steven D ^d   Jaeger, Richard C ^c   Harame, David L ^e  

^a MOTOROLA INC   (United States)

^b AUBURN UNIVERSITY   (United States)

^c Naval Surface Warfare Center US Navy ^*

^d NAVAL SURFACE WARFARE CENTER   (United States)

^e IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DEGRADATION; EPITAXIAL GROWTH; GAMMA RAYS; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; VACUUM DEPOSITED COATINGS;

CURRENT GAIN; IONIZING RADIATION TOLERANCE; ULTRA HIGH VACUUM (UHV);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029533502     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488750     Document Type: Article

References (42)

1. B.S. Meyerson, “Low-Temperature Silicon Epitaxy by Ultrahigh Vacuum Chemical Deposition,” Appl. Phys. Lett., vol. 48, 12 pp. 797-799, 1986.
2. G. Dawe, C. Kermarrec, T. Tewksbury, M. Gilbert, D. Harame, and B. Meyerson, “SiGe Technology: Applications to Wireless Digital Communications,” Applied Microwave & Wireless, Summer 1994 pp. 14–24, 1994.
3. C. Kermarrec, T. Tewksbury, G. Dawe, R. Baines, B. Meyerson, D. Harame, and M. Gilbert, “SiGe HBT's Reach the Microwave and Millimeter-Wave Frontier,” 1994 Bipolar/BiCMOS Circuits & Technology Meeting, pp. 155–162, 1994.
4. J.D. Cressler, D.L. Harame, J.H. Comfort, J.M.C. Stork, B.S. Meyerson, and T.E. Tice, “Silicon-Germanium Heterjunction Bipolar Technology: The Next Leap in Silicon?,” IEEE International Solid-State Circuits Conference, pp. 24–27, 1994.
5. M.R. Shaneyfelt, P.S. Winokur, T.L. Meisenheimer, F.W. Sexton, S.B. Roeske, and M.G. Knoll, “Hardness Variability in Commercial Technologies,” IEEE Trans. Nucl. Sci., vol. NS-41, 6 pp. 2536–2543, 1994.
6. G.C. Messenger and M.S. Ash, The Effects of Radiation on Electrical Systems, 2nd ed., Van Nostrand: New York, (1992).
7. S.K. Khobare, “Noise Measurement Analysis of NPN Transistors After Gamma Irradiation—An Investigation for Reliability,” Microelectron Reliab., vol. 21, 2 pp. 221–224, 1981.
8. R.N. Nowlin, E.W. Enlow, R.D. Schrimpf, and W.E. Combs, “Trends in the Total-Dose Response of Modern Bipolar Transistors,” IEEE Trans. Nucl. Sci., vol. NS-39, 6 pp. 2026–2035, 1992.
9. S.L. Rosier, R.D. Schrimpf, R.N. Nowlin, D.M. Fleetwood, M. DeLaus, R.L. Pease, W.E. Combs, A. Wei, and F. Chai, “Charge Separation for Bipolar Transistors,” IEEE Trans. Nucl. Sci., vol. NS-40, 6 pp. 1276–1285, 1993.
10. E.W. Enlow, R.L. Pease, W.E. Combs, R.D. Schrimpf, and R.N. Nowlin, “Response of Advanced Bipolar Process to Ionizing Radiation,” IEEE Trans. Nucl. Sci., vol. NS-38, 6 pp. 1342–1352, 1991.
11. A. Wei, S.L. Rosier, R.D. Schrimpf, W.E. Combs, and M. Delaus, “Excess Collector Current Due to an Oxide-Trapped-Charge-Induced Emitter in Irradiated NPN BJT's,” 1994 Bipolar/BiCMOS Circuits & Technology Meeting, pp. 201–204, 1994.
12. A. Wei, S.L. Rosier, R.D. Schrimpf, W.E. Combs, and M. Delaus, “Excess Collector Current Due to an Oxide-Trapped-Charge-Induced Emitter in Irradiated NPN BJT's,” IEEE Trans. Elec. Dev., vol. ED-42, 5 pp. 923–927, 1995.
13. R.N. Nowlin, D.M. Fleetwood, and R.D. Schrimpf, “Saturation of the Dose-Rate Response of Bipolar Transistors Below 10 rad(SiO2)/s: Implications for Hardness Assurance,” IEEE Trans. Nucl. Sci., vol. NS-41, 6 pp. 2637–2641, 1994.
14. A.H. Johnston, B.G. Rax, and C.I. Lee, “Enhanced Damage in Linear Bipolar Integrated Circuits at Low Dose Rate,” This Issue of IEEE Trans. Nucl. Sci., vol. NS-42, no. 6, 1995.
15. D.M. Fleetwood, “A First-Principles Approach to Total-Dose Hardnsss Assurence,” Printed in the IEEE Nuclear and Space Radiation Effects Conference Short Course, IEEE Publishing Services, Piscataway, NJ, 1995.
16. S.L. Rosier, W.E. Combs, A. Wei, R.D. Schrimpf, D.M. Fleetwood, M. DeLaus, and R.L. Pease “Bounding the Total-Dose Response of Modern Bipolar Transistors,” IEEE Trans. Nucl. Sci., vol. NS-41, 6 pp. 1864–1870, 1994.
17. H. Ohyama, J. Vanhellemont, Y. Takami, K. Hayama, H. Sunaga, J. Poortmans, M. Caymax, and P. Clauws, “Germanium Content Dependence of Radiation Damage in Strained Si1-xGex Epitaxial Devices,” IEEE Trans. Nucl. Sci., vol. NS-41, 6 pp. 2437–2442, 1994.
18. J.A. Babcock, J.D. Cressler, S.D. Clark, L.S. Bhamidipati, and D.L. Harame, “The Effects of Ionizing Radiation on SiGe HBT's Operated at 77 K,” Extended Abstracts of the 187th ECS Meeting, vol. 95-1 pp. 800–801, 1995. See also — “The Effects of Ionizing Radiation on SiGe HBT's Operated at 77 K,” in The Proceedings of the Low Temperature Electronics & High Temperature Superconductivity, vol. 95-9, Reno, NV, May 1995, pp. 221–231.
19. J.A. Babcock, J.D. Cressler, L.S. Vempati, S.D. Clark, R.C. Jaeger, and D.L. Harame, “Ionizing Radiation Tolerance and Low-Frequency Noise Degradation in UHV/CVD SiGe HBT's,” IEEE Electron Device Letters, vol. EDL-16, No. 8, pp. pp. 351–353, 1995.
20. E.F. Crabbé, J.H. Comfort, J.D. Cressler, J.Y.-C. Sun, and J.M.C. Stork, “High-Low Polysilicon-Emitter SiGe-Base Bipolar Transistors,” IEEE Electron Device Letters, vol. EDL-14, 10 pp. 478–480, 1993.
21. J.D. Cressler, E.F. Crabbé, J.H. Comfort, J.Y.-C. Sun, and J.M.C. Stork, “An Epitaxial Emitter-Cap SiGe-Base Bipolar Technology Optimized for Liquid-Nitrogen Temperature Operation,” IEEE Electron Device Letters, vol. EDL-15, 11 pp. 472–474, 1994.
22. J.D. Cressler, J.H. Comfort, E.F. Crabbé, G.L. Patton, J.M.C. Stork, J.Y.-C. Sun, and B.S. Meyerson, “On the Profile Design and optimization of Epitaxial Si- and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistors DC Design Considerations,” IEEE Trans. Electron Devices, vol. ED-40, 3 pp. 525–541, 1993.
23. J.D. Cressler, E.F. Crabbé, J.H. Comfort, J.M.C. Stork, and J.Y.-C. Sun, “On the Profile Design and optimization of Epitaxial Si- and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues,” IEEE Trans. Electron Devices, vol. ED-40, 3 pp. 542–556, 1993.
24. D.L. Harame, J.H. Comfort, J.D. Cressler, E.F. Crabbé, J.Y.-C. Sun, B.S. Meyerson, and T. Tice, “Si/SiGe Epitaxial-Base Transistors–Part I: Materials, Physics, and Circuits,” IEEE Trans. Electron Dev., vol. ED-42, 3 pp. 455–468, 1995.
25. D.L. Harame, J.H. Comfort, J.D. Cressler, E.F. Crabbé, J.Y.-C. Sun, B.S. Meyerson, and T. Tice, “Si/SiGe Epitaxial-Base Transistors–Part II: Process Integration and Analog Applications,” IEEE Trans. Electron Dev., vol. ED-42, 3 pp. 469–482, 1995.
26. J.A. Babcock, J.D. Cressler, L.S. Vempati, A.J. Joeseph, and D.L. Harame, “Correlation of Low-frequency Noise and Emitter-Base Reverse-Bias Stress in Epitaxial Si- and SiGe-base Bipolar Transistors,” IEDM Technical Digest, to appear December 1995.
27. M. DeLaus, D. Emily, B. Mappes, and R. Pease, “Converting a Bulk Radiation-Hardened BiCMOS Technology into a Dialectically-Isolated Process,” IEEE Trans. Nucl. Sci., vol. NS-40, 6 pp. 1774–1779, 1993.
28. M. Dentan, et al., “Study of a CMOS-JFET-Bipolar Radiation Hard Analog-Digital Technology Suitable for High Energy Physics Electronics,” IEEE Trans. Nucl. Sci., vol. NS-40, 6 pp. 1555–1560, 1993.
29. D.M. Fleetwood, S.L. Kosier, R.N. Nowlin, R.D. Schrimpf, J.R.A. Reber, M. DeLaus, P.S. Winokur, A. Wei, W.E. Combs, and R.L. Pease, “Physical Mechanisms Contributing to Enhanced Bipolar Gain Degradation at Low Dose Rates,” IEEE Trans. Nucl. Sci., vol. NS-41, 6 pp. 1871–1883, 1994.
30. P.V. Dressendorfer, “Radiation-Hardening Technology,” in Ionizing Radiation Effects in MOS Devices & Circuits, T.P. Ma and P.V. Dressendorfer, Editors, JohnWiley & Sons: New York, pp. 333–400, 1989.
31. R.N. Nowlin, D.M. Fleetwood, R.D. Schrimpf, R.L. Pease and W.E. Combs, “Hardness-Assurance and Testing Issues for Bipolar/BiCMOS Devices,” IEEE Trans. Nucl. Sci., vol. NS-40, 6 pp. 1686–1693, 1993.
32. A. Wei, S.L. Rosier, R.D. Schrimpf, D.M. Fleetwood, and W.E. Combs, “Dose-Rate Effects on Bipolar Junction Transistor Gain Degradation,” Appl. Phys. Lett., vol. 65, 15 pp. 1918–1920, 1994.
33. J. Frenkel, “On the Pre-Breakdown Phenomena in Insulators and Electronic Semiconductors,” Phys. Rev., vol. 54 pp. 647–648, 1938.
34. J.C.S. Woo, J.D. Plummer, and J.M.C. Stork, “Non-Ideal Base current in Bipolar Transistors at Low-Temperatures,” IEEE Trans. Electron Devices, vol. ED-34, 1 pp. 130–138, 1987.
35. E. Hackbarth and D.D. Tang, “Inherent and Stress-Induced Leakage in Heavily Doped Silicon Junctions,” IEEE Trans. Electron Devices, vol. ED-35, 12 pp. 2108–2118, 1988.
36. J.A. Babcock, A.J. Joeseph, J.D. Cressler, and D.L. Harame, “The Effects of Reverse-Bias Emitter-Base Stress on the Cryogenic Operation of Advanced UHV/CVD Si- and SiGe-base Bipolar Transistors,” submitted for presentation and publication at the 1996 International Physics and Reliability Symposium.
37. J. Kilmer, A. van der Ziel, and G. Bosnian, “Presence of Mobility-Fluctuation 1/f Noise Identified in Silicon P+NP Transistors,” Solid State Electronics, vol. 26, 1 pp. 71–74, 1983.
38. X.L. Wu, A. van der Ziel, A.N. Bibbas, and A.D. van Rheenen, “Burst-Type Noise Mechanisms in Bipolar Transistors,” Solid-State Elec., vol.32, 11 pp. 1039–1042, 1989.
39. K.S. Ralls, W.J. Skocpol, L.D. Jackel, R.E. Howard, L.A. Fetter, R.W. Epworth, and D.M. Tennant, “Discrete Resistance Switching in Submicron Silicon Inversion Layers: Individual Interface Traps and Low-frequency (1/f?) Noise,” Phys. Rev. Lett., vol. 52, p. 228, 1984.
40. M.H. Tsai and T.P. Ma, “The Impact of Device Scaling on the Current Fluctuations in MOSFET's,” IEEE Trans. Electron Devices, vol. ED-41, 11 pp. 2061–2068, 1994.
41. L.S. Vempati, J.D. Cressler, R.C. Jaeger, and D.L. Harame, “Low-frequency Noise in UHV/CVD Si- and SiGe-base Bipolar Transistors” to be presented at the 1995 Bipolar/BiCMOS Circuits & Technology Meeting.
42. P.R. Gray and R.G. Meyer, Analysis and Design of Analog Integrated Circuits, 3rd ed., John Wiely & Sons, Inc.: New York, (1993).