73-GHz Self-Aligned SiGe-Base Bipolar Transistors with Phosphorus-Doped Polysilicon Emitters

IEEE Electron Device Letters

Volumn 13, Issue 5, 1992, Pages 259-261

  Crabbé, Emmanuel F ^a   Comfort, James H ^a   Lee, Wai ^a   Cressler, John D ^a   Meyerson, Bernard S ^a   Megdanis, Andrew C ^a   Sun, Jack Y C ^a   Stork, Johannes M C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, DIGITAL - MICROWAVES; SEMICONDUCTING SILICON - DOPING; SILICON GERMANIUM ALLOYS;

ARSENIC-DOPED POLYSILICON EMITTERS; EMITTER-COUPLED LOGIC; LOGIC GATE DELAYS; NONTHRESHOLD LOGIC; PHOSPHORUS-DOPED POLYSILICON EMITTERS;

TRANSISTORS, BIPOLAR;

EID: 0026869745     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.145046     Document Type: Article

References (12)

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