Degradation of si1-xgex epitaxial heterojunction bipolar transistors by 1-mev fast neutrons

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1550-1557

  Ohyama, H ^a   Vanhellemont, J ^b   Takami, Y ^c   Hayama, K ^a   Sunaga, H ^d   Poortmans, J ^b   Caymax, M ^e  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b IMEC   (Belgium)

^c RIKKYO UNIVERSITY   (Japan)

^d TAKASAKI ADVANCED RADIATION RESEARCH INSTITUTE   (Japan)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DEGRADATION; EPITAXIAL GROWTH; FAILURE (MECHANICAL); NEUTRONS; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

COLLECTOR CURRENT; ELECTRON CAPTURE LEVELS; INTERSTITIAL BORON; KNOCK ON ATOMS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029543722     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488749     Document Type: Article

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