Very-high fT and fmax silicon bipolar transistors using ultra-high-performance super self-aligned process technology for low-energy and ultra-high-speed LSI's

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 735-738

  Ugajin, Mamoru ^a   Kodate, Jun ichi ^a   Kobayashi, Yoshiji ^a   Konaka, Shinsuke ^a   Sakai, Tetsushi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POLISHING; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONTACTS; ELECTRIC CURRENTS; LSI CIRCUITS; PHOSPHORUS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON NITRIDE;

BASE COLLECTOR JUNCTION CAPACITANCE; BASE RESISTANCE; CHEMICAL MECHANICAL POLISHING; CUTOFF FREQUENCY; PHOSPHOROUS IMPLANTATION; SELF ALIGNED PLANAR OXIDATION TECHNOLOGY; SILICON BIPOLAR TRANSISTORS; SWITCHING CURRENTS;

BIPOLAR TRANSISTORS;

EID: 0029489180     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)