Uncooled high-temperature (130°C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s

IEEE Photonics Technology Letters

Volumn 9, Issue 5, 1997, Pages 575-577

  Czotscher, K ^b   Larkins, E C ^a,b,c   Weisser, S ^b   Benz, W ^b   Daleiden, J ^b   Fleissner, J ^b   Maier, M ^b   Ralston, J D ^a,d   Rosenzweig, J ^b  

^a IEEE

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d SDL INC   (United States)

Author keywords

Digital modulation; High speed devices; Laser thermal factors; Quantum well lasers; Semiconductor lasers

Indexed keywords

BANDWIDTH; HIGH TEMPERATURE EFFECTS; HIGH TEMPERATURE OPERATIONS; LIGHT MODULATION; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

FABRY PEROT LASERS; LASER THERMAL FACTORS; RIDGE WAVEGUIDE LASERS; SHORT CAVITY LASERS;

QUANTUM WELL LASERS;

EID: 0031144003     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.588108     Document Type: Article

References (12)

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