Room-temperature pulsed operation of GaAsSb/GaAs vertical-cavity surface-emitting lasers

Electronics Letters

Volumn 35, Issue 11, 1999, Pages 903-904

  Anan, T ^a   Yamada, M ^a   Tokutome, K ^a   Sugou, S ^a   Nishi, K ^a   Kamei, A ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

VERTICAL-CAVITY SURFACE-EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0032638439     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990633     Document Type: Article

References (7)

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2. JAYARAMAN, V., GESKE, J.C., MACDOUGAL, M.H., PETERS, F.H., LOWES, T.D., and CHAR, T.T.: 'Uniform threshold current, continuous-wave, singlemode 1300nm vertical cavity lasers from 0 to 70°C', Electron. Lett., 1998, 34, pp. 1405-1407
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6. ANAN, T., NISHI, K., SUGOU, S., YAMADA, M., TOKUTOME, K., and GOMYO, A.: 'GaAsSb: A novel material for 1.3μm VCSELs', Electron. Lett., 1998, 34, pp. 2127-2129
7. YAMADA, M., ANAN, T., TOKUTOME, K., NISHI, K., GOMYO, A., and SUGOU, S.: 'Low-threshold lasing at 1.3 μm from GaAsSb quantum wells directly grown on GaAs substrates'. Paper WA3, Conf. Proc. LEOS '98, Orlando, 1998, pp. 149-150