Selective MOVPE growth of InGaAsP and InGaAs using TBA and TBP

Journal of Electronic Materials

Volumn 25, Issue 3, 1996, Pages 401-406

  Sakata, Y ^a   Nakamura, T ^a   Ae, S ^a   Terakado, T ^a   Inomoto, Y ^a   Torikai, T ^a   Hasumi, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Selective area growth; TBA TBP; Vapor phase lateral diffusion

Indexed keywords

EID: 0000847537     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666610     Document Type: Article

References (10)

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