Temperature characteristics of threshold currents of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Influence of nonradiative recombination centers

Applied Physics Letters

Volumn 75, Issue 5, 1999, Pages 656-658

  Sugawara, Mitsuru ^a   Mukai, Kohki ^a   Nakata, Yoshiaki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; SEMICONDUCTOR QUANTUM DOTS;

NONRADIATIVE CARRIER RECOMBINATION; QUANTUM DOT LASERS; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0032621576     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124472     Document Type: Article

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