Effects of Ammonia Anneal on Electron Trappings in Silicon Dioxide

Journal of the Electrochemical Society

Volumn 129, Issue 9, 1982, Pages 2042-2044

  Dong, D W ^b   Hartstein, A ^b  

^a INTEL CORPORATION   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

dielectric film; electrical breakdown; electron trapping; oxynifride; silicon dioxide

Indexed keywords

AMMONIA; FILMS - DIELECTRIC; SEMICONDUCTOR DEVICE MANUFACTURE;

ANNEALING;

SILICA;

EID: 0020180222     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2124347     Document Type: Article

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