On the Hot-Carrier-Induced Post-Stress Interface Trap Generation in n-Channel MOS Transistors

IEEE Transactions on Electron Devices

Volumn 41, Issue 3, 1994, Pages 413-419

  Bellens, Rudi ^a   Schrijver, Erik de ^a   den bosch, Geert Van ^a   Groeseneken, G ^a   Heremans, Paul ^a   Maes, Herman E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC NETWORK PARAMETERS; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS; THERMAL STRESS; TRANSISTORS;

HOT CARRIER INDUCED POST STRESS INTERFACE TRAP GENERATION; N CHANNEL MOS TRANSISTORS;

MOS DEVICES;

EID: 0028401469     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.275228     Document Type: Article

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