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Journal of Applied Physics

Volumn 54, Issue 12, 1983, Pages 6938-6942

Hydrogen migration under avalanche injection of electrons in Si metal-oxide-semiconductor capacitors

(4) Gale, R a Feigl, F J a Magee, C W b Young, D R c

a LEHIGH UNIVERSITY (United States)

b SARNOFF CORPORATION (United States)

c IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM AND ALLOYS; ELECTRONS; HYDROGEN; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES, MOS;

CAPACITORS;

EID: 0020930377 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.332009 Document Type: Article

Times cited : (122)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.