Electrical and Physical Characteristics of Thin Nitrided Oxides Prepared by Rapid Thermal Nitridation

IEEE Transactions on Electron Devices

Volumn 34, Issue 11, 1987, Pages 2238-2245

  Hori, Takashi ^a   Iwasaki, Hiroshi ^a   Naito, Yasushi ^a   Esaki, Hideya ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79958059368     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23226     Document Type: Article

References (23)

1. T. Ito, T. Nakamura, and H. Ishikawa, “Advantages of thermal nitride and nitroxide gate films in VLSI process,” IEEE Trans. Electron Devices, vol. ED-29, p. 498, 1982.
2. M. M. Moslehi and K. C. Saraswat, “Thermal nitridation of Si and SiO2 for VLSI,” IEEE Trans. Electron Devices, vol. ED-32, p. 106, 1985.
3. F. L. Terry, Jr., R. J. Aucoin, M. L. Naiman, and S. D. Senturia, “Radiation effects in nitrided oxides,” IEEE Electron Device Lett., vol. EDL-4, p. 191, 1983.
4. S. K. Lai, J. Lee, and V. K. Dham, “Electrical properties of nitridedoxide systems for use in gate dielectrics and EEPROM,” in IEDM Tech. Dig., p. 190, 1983.
5. T. Ito, T. Nakamura, and H. Ishikawa, “Effect of thermally nitrided SiO2 (nitroxide) on MOS characteristics,” J. Electrochem. Soc., vol. 129, p. 184, 1982.
6. M. Severi, L. Dori, and M. Impronta, “Effect on thermally nitrided SiO2 thickness on MIS characteristics,” IEEE Electron Device Lett., vol. EDL-6, p. 3, 1985.
7. P. Pan and C. Paquette, “Positive charge generation in thin SiO2 films during nitridation process,” Appl. Phys. Lett., vol. 47, p. 473, 1985.
8. C. T. Chen, F. C. Tseng, and C. Y. Chang, “Study of electrical characteristics on thermally nitrided SiO2 (nitroxide) films,” J. Electrochem. Soc., vol. 131, p. 875, 1984.
9. G. A. Ruggles and J. R. Monkowski, “An investigation of fixed charge buildup in nitrided oxides,” J. Electrochem. Soc., vol. 133, p. 787, 1986.
10. R. P. Vasquez and A. Madhukar, “Strain-dependent defect formation kinetics and a correlation between flatband voltage and nitrogen distribution in thermally nitrided SiOxNy/Si structures,” Appl. Phys. Lett., vol. 47, p. 998, 1985.
11. J. Nulman, J. P. Krusius, and L. Rathbun, “Electrical and structural characteristics of thin nitrided gate oxides prepared by rapid thermal nitridation,” in IEDM Tech. Dig., p. 169, 1984.
12. J. Nulmam and J. P. Krusius, “Rapid thermal nitridation of thin thermal silicon dioxide films,” Appl. Phys. Lett., vol. 47, p. 148, 1985.
13. C. C. Chang, A. Kamgar, and D. Kahng, “High-temperature rapid thermal nitridation of silicon dioxide for future VLSI applications,” IEEE Electron Device Lett., vol. EDL-6, p. 476, 1985.
14. M. M. Moslehi, S. C. Shatas, and K. C. Saraswat, “Rapid thermal oxidation and nitridation of silicon,” in Proc. 5th Int. Symp. Silicon Mat. Sci. Technol., ECS vol. 86-4, p. 379, 1986.
15. T. Hori, Y. Naito, H. Iwasaki, and H. Esaki, “Interface states and fixed charges in nanometer-range thin nitrided oxides prepared by rapid thermal annealing,” IEEE Electron Device Lett., vol. EDL-7, p. 669, 1986.
16. T. Hori, Y. Naito, H. Iwasaki, and H. Esaki, presented at the IEEE Semiconductor Interface Specialists Conf., San Diego, CA, Dec. 1986.
17. Y. Naito, T. Hori, H. Iwasaki, and H. Esaki, “Effects of nitrogen distribution in nitrided oxide prepared by rapid thermal annealing on its electrical characteristics,” J. Vac. Sci. Technol., vol. 5, p. 663, 1987.
18. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, ch. 7.
19. A. K. Ray, C. J. Merz, and T. N. Nguyen, “Nitrided SiO2 films for VLSI applications,” in Proc. 3rd Int. Symp. VLSI Science Technol., p. 339, 1985.
20. R. P. Vasquez, M. H. Hecht, and F. J. Grunthaner, “X-ray photo-electron spectroscopy study of the chemical structure of thermally nitrided SiO2,” Appl. Phys. Lett., vol. 44, p. 969, 1984.
21. M. M. Moslehi, C. J. Han, K. C. Saraswat, C. R. Helms, and S. Shatas, “Compositional studies of thermally nitrided silicon dioxide (nitroxide),” J. Electrochem. Soc., vol. 132, p. 2189, 1985.
22. R. P. Vasquez and A. Madhukar, “A kinetic model for the thermal nitridation of SiO2/Si,” J. Appl. Phys., vol. 60, p. 234, 1986.
23. F. H. P. M. Habraken, E. J. Evers, and A. E. T. Kuiper, “Hydrogen content of thermally nitrided thin silicon dioxide films,” Appl. Phys. Lett., vol. 44, p. 62, 1983.