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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 3 A, 2000, Pages 1006-1012

Transient enhanced diffusion and deactivation of high-dose implanted arsenic in silicon

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

Arsenic; Arsenic complex formation; Arsenic precipitation; Boron segregation; Eor defects; High concentration diffusion; Silicon; Simulation; Transient enhanced diffusion

Indexed keywords

ANNEALING; ARSENIC; COMPUTER SIMULATION; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; MATHEMATICAL MODELS; PRECIPITATION (CHEMICAL); SEMICONDUCTING BORON; SEMICONDUCTING SILICON;

ARSENIC COMPLEX FORMATION; BORON SEGREGATION; END OF RANGE DEFECT; HIGH CONCENTRATION DIFFUSION; TRANSIENT ENHANCED DIFFUSION;

ION IMPLANTATION;

EID: 0033743648 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.1006 Document Type: Article

Times cited : (11)

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