Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion

Applied Physics Letters

Volumn 72, Issue 14, 1998, Pages 1709-1711

  Chang, R D ^a   Choi, P S ^a   Kwong, D L ^a   Wristers, D ^b   Chu, P K ^c  

^a The University of Texas at Austin   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001751263     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121159     Document Type: Article

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