Dopant diffusion model refinement and its impact on the Calculation of reverse short channel effect

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 803-806

  Hane, Masami ^a   Ikeeawa, Takeo ^a   Hiroi, Masayuki ^a   Matsumoto, Hiroshi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DIFFUSION; MOSFET DEVICES; THRESHOLD VOLTAGE; ARSENIC; BORON; CALCULATIONS; COMPUTER SIMULATION; IMPURITIES; ION IMPLANTATION; POINT DEFECTS; SILICON;

DEFECT PAIRS; DEVICE CHARACTERISTICS; DIFFUSION MODEL; DIFFUSION PROFILES; DOPANT-DIFFUSION; ELECTRICAL ACTIVATION; ENERGY VALUE; INTERSTITIALS; MODEL REFINEMENT; REVERSE SHORT CHANNEL EFFECTS;

ARSENIC; DIFFUSION;

DOPANT DIFFUSION MODEL; ELECTRICAL ACTIVATION; REVERSE SHORT CHANNEL EFFECT;

EID: 0030397507     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554101     Document Type: Conference Paper

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