Simulation of high-concentration phosphorus diffusion in silicon taking into account phosphorus clustering and pile-up

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 11, 1999, Pages 6188-6192

  Uematsu, Masashi ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; PHOSPHORUS; POINT DEFECTS;

SELF INTERSTITIALS; TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0033314843     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6188     Document Type: Article

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