Evolution of the crystallographic position of As impurities in heavily doped Si crystals as their electrical activity changes

Applied Physics Letters

Volumn 68, Issue 22, 1996, Pages 3090-3092

  Herrera Gomez A ^a,b   Rousseau, P M ^a,b   Materlik, G ^a,b   Kendelewicz, T ^a,b   Woicik, J C ^a,b   Griffin, P B ^a,b   Plummer, J ^a,b   Spicer, W E ^a,b  

^a STANFORD UNIVERSITY   (United States)

^b UNIVERSIDAD AUTÓNOMA DE QUERÉTARO   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344597193     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116432     Document Type: Article

References (19)

1. D. Nobili, A. Carabelas, G. Celotti, and A. Solmi, J. Electrochem. Soc. INS 130, 922 (1983).
2. J. L. Allain, J. R. Regnard, A. Bourret, A. Parisini, A. Armigliato, G. Tourillon, and S. Pizzini, Phys. Rev. B 63, 9434 (1992), and references therein.
3. A. Parisini, A. Bourret, A. Armigliato, M. Servidori, S. Solmi, and R. Fabbri, J. Appl. Phys. AIP 67, 2320 (1990).
4. M. Y. Tsai, F. F. Morehead, and J. E. E. Baglin, J. Appl. Phys. AIP 51, 3230 (1980).
5. S. Hirota, M. Miyake, S. Nakayama, and E. Arai, J. Electrochem. Soc. INS 137, 318 (1990).
6. A. Erbill, G. S. Cargill III, and R. F. Boehme, Mater. Res. Soc. 41, 275 (1985).
7. L. J. Borucki, IEDM Tech. Digest, p. 753 (1990).
8. J. Auleytner and J. Majewski, Surf. Sci. 231, 227 (1990), and references therein.
9. J. A. Golovchenko, B. W. Batterman, and W. L. Brown, Phys. Rev. B 10, 4239 (1974); J. R. Patel and J. A. Golovchenko, Phys. Rev. Lett. 50, 1858 (1983).
10. J. Pelka and J. Auleytner, Acta Phys. Pol. A INS 82, 163 (1992).
11. N. Hertel, G. Materlik, and J. Zagenhagen, Condens. Matter. 58, 199 (1985); G. Materlik and J. Zegenhagen, Phys. Lett. 104A, 47 (1984).
12. S. Lunning, P. M. Rousseau, P. B. Griffin, P. G. Carey, and J. D. Plummer, Proceedings of IEEE International Electron Devices Meeting, San Francisco, CA, 13-16 Dec. 1992, p. 457.
13. A. Herrera-Gómez, Ph.D. dissertation, SLAC-Report-438. Stanford University, 1994.
14. It is important to notice that, in principle, triangulation using three noncoplanar Bragg reflections are necessary to locate the impurities in space. However, symmetry arguments allow the use of only one reflection to make the three-dimensional triangulation. In contrast to surface impurities, there is not preferred directions for bulk impurities (no up or down); then, by symmetry, the results for the (1̄11̄), (11̄1̄), etc. reflections should be identical to the (111) results. This allows us to conclude that the impurities have been located in three dimensions at the substitutional site.
15. G. S. Cargill, J. Angilello, and K. L. Kavanagh, Phys. Rev. Lett. AIP 61, 1748 (1988).
16. U. Pietsch, Phys. Status Solidi B INS 157, K73-6 (1990).
17. A. Lietoila, J. F. Gibbons, and T. W. Sigmon, Appl. Phys. Lett. AIP 36, 765 (1980).
18. C. Brizard, J. R. Regnar, J. L. Allain, A. Bourret, and M. Dubus, J. Appl. Phys. AIP 75, 126 (1994).
19. K. C. Pandey, A. Erbil, G. S. Cargill, and R. F. Boehme, Phys. Rev. Lett. AIP 61, 1282 (1988).