Simulation of clustering and pile-up during post-implantation annealing of phosphorus in silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1, 1999, Pages 7-11

  Schroer, Erwin ^a   Uematsu, Masashi ^b  

^a NTT CORPORATION   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Annealing; Implantation; Phosphorus; Phosphorus clustering; Phosphorus pile up; Silicon; Simulation

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PARTIAL DIFFERENTIAL EQUATIONS; PHOSPHORUS; SEMICONDUCTING SILICON;

DIFFUSION REACTION EQUATIONS; PHOSPHORUS CLUSTERING;

SEMICONDUCTOR DOPING;

EID: 0032663025     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.7     Document Type: Article

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