Modeling and simulation of singleand multiple-gate 2-D MESFET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 8, 1999, Pages 1742-1748

  Iniguez, Benjamin ^a,b   Lii, Jian Qiang ^a   Hurt, Michael J ^a   Peatman, William C B ^a  

^a IEEE   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES CONTROL; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); SCHOTTKY BARRIER DIODES;

EQUIVALENT CIRCUIT MODEL; MULTIPLE GATE TWO DIMENSIONAL MESFET;

MESFET DEVICES;

EID: 0033169513     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.777165     Document Type: Article

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