Novel metal/2-DEG junction transistors

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 1993, Pages 314-319

  Peatman, W C B ^a   Park, H ^a   Gelmont, B ^a   Shur, M ^a   Maki, P ^a   Brown, E R ^a   Rooks, M J ^a  

^a UNIVERSITY OF VIRGINIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; ELECTRONIC PROPERTIES; GATES (TRANSISTOR); MESFET DEVICES; RESONANT CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; TRANSISTORS;

METAL/TWO DIMENSIONAL ELECTRON GAS SCHOTTKY CONTACTS; SCHOTTKY GATED RESONANT TUNNELING TRANSISTOR;

SCHOTTKY BARRIER DIODES;

EID: 0027887827     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)