The optoelectronic response of a laterally contacted 2-D MESFET

IEEE Transactions on Electron Devices

Volumn 43, Issue 12, 1996, Pages 2300-2301

  Tsai, R ^a   Schuermeyer, F ^a   Peatman, W C B ^b   Shur, M ^b  

^a University of Virginia   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON TRANSPORT PROPERTIES; FREQUENCY RESPONSE; GATES (TRANSISTOR); HETEROJUNCTIONS; OPTICAL VARIABLES MEASUREMENT; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; THIN FILMS;

CONDUCTIVE CHANNEL; CONTACTING GATES; OPTOELECTRONIC RESPONSE; PHOTOGAINS; RESPONSIVITY; SPECTRAL RESPONSES;

MESFET DEVICES;

EID: 0030379861     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.544424     Document Type: Article

References (9)

1. S. Banba, E. Suematsu and H. Ogawu, "Fundamental properties of HEMT photodetector for use in fiber optic links," in Proc. 22nd European Microwave Conf., 1992, pp. 747-750.
2. M. A. Romero, L. E. M. de Barros, Jr., and P. R. Herczfeld, "Internal photovoltaic effect in microwave devices," in Proc. IEEE MTT-S Int. Microwave Conf. 1995, San Diego, CA, vol. 3, pp. 1505-1508.
3. H. Schumacher, H. P. Leblanc, J. Soole, and R. Bhat, "An investigation of the optoelectronic response of GaAs/InGaAs MSM photodetectors," IEEE Electron Device Lett., vol. 9, pp. 607-609, 1988.
4. W. C. B. Peatman, H. Park, and M. Shur, "Two-dimensional metalsemiconductor-field effect-transistor for ultra low power circuit applications," IEEE Electron Device Lett., vol. 15, pp. 245-247, 1994.
5. W. C. B. Peatman, M. Hurt, H. Park, T. Ytterdal, R. Tsai, and M. Shur, "Narrow channel 2-D MESFET for low power electronics," IEEE Trans. Electron Devices, vol. 42, pp. 1569-1573, 1995.
6. W. C. B. Peatman, T. W. Crowe, and M. Shur, "A novel Schottky/2-deg diode for millimeter- and submillimeter-wave multiplier applications," IEEE Electron Device Lett., vol. 13, pp. 11-13, 1992.
7. B. Gelmont, W. Peatman, and M. Shur, "Heterodimensional Schottky metal-two-dimensional electron gas interfaces," J. Vac. Sci. Tech., vol. 11, pp. 1670-1674, 1993.
8. MBE wafer and van per Pauw data provided by Quantum Epitaxial Designs, Inc., Bethlehem, PA.
9. F. Schuermeyer, C. Cerny J. P. Loehr, and R. E. Sheriff, "Photoelectric emission and conductance studies on fully fabricated PHEMT's," Solid State Electron, vol. 38, pp. 1618, 1995.