Breakdown behavior of low-power pseudomorphic AlGaAs/InGaAs 2-D MESFET'S

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1843-1845

  Hurt, M J ^a   Meneghesso, G ^a   Zanoni, E ^a   Peatman, W C B ^a   Tsai, R ^a   Shur, M S ^a  

^a Advanced Device Technologies Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE MEASUREMENT; GATES (TRANSISTOR); IONIZATION; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; VOLTAGE MEASUREMENT;

DRAIN SOURCE BIAS; LOW POWER HETERODIMENSIONAL TRANSISTOR; SCHOTTKY METAL JUNCTION; TWO DIMENSIONAL ELECTRON GAS;

MESFET DEVICES;

EID: 0032136677     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704387     Document Type: Article

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