Two-Dimensional Metal-Semiconductor Field Effect Transistor for Ultra Low Power Circuit Applications

IEEE Electron Device Letters

Volumn 15, Issue 7, 1994, Pages 245-247

  Peatman, W C B ^a   Park, H ^a   Shur, M ^a  

^a UNIVERSITY OF VIRGINIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; ESTIMATION; GATES (TRANSISTOR); HETEROJUNCTIONS; MODULATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

CHANNEL WIDTH; CUTOFF FREQUENCY; DRAIN CURRENT; HETEROSTRUCTURE; SCHOTTKY SIDE GATE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; TWO DIMENSIONAL MESFET; ULTRA LOW POWER CIRCUIT APPLICATION;

MESFET DEVICES;

EID: 0028460486     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.294084     Document Type: Article

References (7)

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5. W. C. B. Peatman T. W. Crowe, M. Shur, and B. Gelmont, A Schottky/2-deg varactor diode for millimeter and submillimeter wave multiplier applications, in Proc. Third Int. Symp. Space THz Tech., Ann Arbor, MI, pp. 93–109, 1992.
6. MBE wafer and van der Pauw data provided by Quantum Epitaxial Designs, Inc., Bethlehem, PA.
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