-
2
-
-
36549100559
-
-
Jan. 1987.
-
E. R. Brown, T. C. L. G. Sollner, W. D. Goodhue, and C. D. Parker, "Millimeter-band oscillations based on resonant tunneling in a doublebarrier diode at room temperature," Appl. Phys. Lett. , vol. 50, no. 2, pp. 83-85, Jan. 1987.
-
T. C. L. G. Sollner, W. D. Goodhue, and C. D. Parker, "Millimeter-band Oscillations Based on Resonant Tunneling in A Doublebarrier Diode at Room Temperature," Appl. Phys. Lett. , Vol. 50, No. 2, Pp. 83-85
-
-
Brown, E.R.1
-
3
-
-
33747029309
-
-
1989.
-
K. L. Lear, K. Yoh, and J. S. Harris, Jr. , "Monolithic integration of GaAs/AlGaAs resonant tunnel diode load and GaAs enhancement-mode MESFET drivers for tunnel diode FET logic gates," Inst. Phys. Conf. Ser. . no. 96, ch. 9, pp. 593-598, 1989.
-
K. Yoh, and J. S. Harris, Jr. , "Monolithic Integration of GaAs/AlGaAs Resonant Tunnel Diode Load and GaAs Enhancement-mode MESFET Drivers for Tunnel Diode FET Logic Gates," Inst. Phys. Conf. Ser. . No. 96, Ch. 9, Pp. 593-598
-
-
Lear, K.L.1
-
4
-
-
0028460486
-
-
1994.
-
W. C. B. Peatman, H. Park, and M. Shur, "Two-dimensional metalsemiconductor field effect transistor for ultra-low-power circuit applications," IEEE Electron Device Lett. , vol. 15, pp. 245-247, July 1994.
-
H. Park, and M. Shur, "Two-dimensional Metalsemiconductor Field Effect Transistor for Ultra-low-power Circuit Applications," IEEE Electron Device Lett. , Vol. 15, Pp. 245-247, July
-
-
Peatman, W.C.B.1
-
5
-
-
0029379445
-
-
Sept. 1995.
-
W. C. B. Peatman, M. Hurt, H. Park, T. Ytterdal, R. Tsai, and M. Shur, "Narrow channel 2-D MESFET for low-power electronics," IEEE Trans. Electron Devices, vol. 42, pp. 1569-1573, Sept. 1995.
-
M. Hurt, H. Park, T. Ytterdal, R. Tsai, and M. Shur, "Narrow Channel 2-D MESFET for Low-power Electronics," IEEE Trans. Electron Devices, Vol. 42, Pp. 1569-1573
-
-
Peatman, W.C.B.1
-
6
-
-
33747703426
-
-
p. 450.
-
K. Lee, M. Shur, T. A. Fjeldly, and T. Ytterdal, Semiconductor Device Modeling for VLSI. Englewood Cliffs, NJ: Prentice Hall, 1993, p. 450.
-
M. Shur, T. A. Fjeldly, and T. Ytterdal, Semiconductor Device Modeling for VLSI. Englewood Cliffs, NJ: Prentice Hall, 1993
-
-
Lee, K.1
-
7
-
-
33747002775
-
-
pp. 79-82.
-
M. J. Hurt, W. C. B. Peatman, R. Tsai, B. J. Moon, T. Ytterdal, and M. Shur, "Comparison of 2-D and 3-D side-gated FET's," in Proc. Int. Semiconductor Device Research Symp. ISDRS'95, Charlottes ville, VA, 1995, pp. 79-82.
-
W. C. B. Peatman, R. Tsai, B. J. Moon, T. Ytterdal, and M. Shur, "Comparison of 2-D and 3-D Side-gated FET's," in Proc. Int. Semiconductor Device Research Symp. ISDRS'95, Charlottes Ville, VA, 1995
-
-
Hurt, M.J.1
-
8
-
-
33746936190
-
-
pp. 265-267.
-
G. G. Shahidi, T. H. Ning, R. H. Dennard, and B. Davari, "SOI for low-voltage and high-speed CMOS," in Ext. Abstr. 1994 Int. Conf. Solid-State Dev. and Mater. , Yokahama, Japan, pp. 265-267.
-
T. H. Ning, R. H. Dennard, and B. Davari, "SOI for Low-voltage and High-speed CMOS," in Ext. Abstr. 1994 Int. Conf. Solid-State Dev. and Mater. , Yokahama, Japan
-
-
Shahidi, G.G.1
-
9
-
-
0030085794
-
-
Feb. 1996.
-
W. C. B. Peatman, R. Tsai, T. Ytterdal, M. Hurt, H. Park, J. Gonza- les, and M. Shur, "Sub-half-micrometer width 2-D MESFET," IEEE Electron Device Lett. , vol. 17, pp. 4012, Feb. 1996.
-
R. Tsai, T. Ytterdal, M. Hurt, H. Park, J. Gonza- Les, and M. Shur, "Sub-half-micrometer Width 2-D MESFET," IEEE Electron Device Lett. , Vol. 17, Pp. 4012
-
-
Peatman, W.C.B.1
-
10
-
-
33646912073
-
-
p. 142.
-
E. R. Brown, M. A. Hollis, F. W. Smith, P. A. Asbeck, and K. C. Wang, "Resonant-tunneling-diode speed limits and applications in fast logic circuits," in Proc. Int. Solid-State Circuits Conf. , San Francisco, CA, 1992, p. 142.
-
M. A. Hollis, F. W. Smith, P. A. Asbeck, and K. C. Wang, "Resonant-tunneling-diode Speed Limits and Applications in Fast Logic Circuits," in Proc. Int. Solid-State Circuits Conf. , San Francisco, CA, 1992
-
-
Brown, E.R.1
-
11
-
-
0028462486
-
-
1994.
-
W. C. B. Peatman, E. R. Brown, M. J. Rooks, P. Maki, W. J. Grimm, and M. Shur, "Novel resonant tunneling transistor with high transconductance at room temperature," IEEE Electron Device Lett. , vol. 15, pp. 236-238, July 1994.
-
E. R. Brown, M. J. Rooks, P. Maki, W. J. Grimm, and M. Shur, "Novel Resonant Tunneling Transistor with High Transconductance at Room Temperature," IEEE Electron Device Lett. , Vol. 15, Pp. 236-238, July
-
-
Peatman, W.C.B.1
-
12
-
-
33746986606
-
-
pp. 739-741.
-
V. Kolagunta, D. B. Janes, G. Chen, K. J. Webb, and M. Melloch, "Side-gated resonant tunneling transistors," in Proc. Int. Semiconductor Device Research Symp. ISDRS'95, Charlottesville, VA, Dec. 1995, pp. 739-741.
-
D. B. Janes, G. Chen, K. J. Webb, and M. Melloch, "Side-gated Resonant Tunneling Transistors," in Proc. Int. Semiconductor Device Research Symp. ISDRS'95, Charlottesville, VA, Dec. 1995
-
-
Kolagunta, V.1
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