Narrow Channel 2-D MESFET for Low Power Electronics

IEEE Transactions on Electron Devices

Volumn 42, Issue 9, 1995, Pages 1569-1573

  Peatman, William C B ^a,b   Hurt, Michael J ^a   Park, Hyunchang ^a   Ytterdal, Trond ^a   Tsai, Roger ^a   Shur, Michael S ^a  

^a UNIVERSITY OF VIRGINIA   (United States)

^b Advanced Device Technologies Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ELECTRIC INVERTERS; OSCILLATORS (ELECTRONIC); POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

RING OSCILLATOR CIRCUITS; SCHOTTKY CONTACTS; TWO DIMENSIONAL ELECTRON GAS CHANNEL;

MESFET DEVICES;

EID: 0029379445     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.405269     Document Type: Article

References (10)

1. W. C. B. Peatman, T. W. Crowe, and M. Shur, “A novel Schottky/2-DEG diode for millimeter and submillimeter wave multiplier applications,” IEEE Electron Device Lett., vol. 13, pp. 11–13, 1992.
2. W. C. B. Peatman, B. Gelmont, W. J. Grimm, H. Park, M. Shur, E. R. Brown, and M. J. Rooks, “Heterodimensional Schottky-gate devices,” in Proc. Int'l. Semic. Dev. Res. Symp., 1993, pp. 427–430.
3. W. C. B. Peatman, H. Park, and M. Shur, “Two-dimensional metal-semiconductor field effect transistor for ultra low power circuit applications,” IEEE Electron Device Lett., vol. 15, pp. 245–247, 1994.
4. B. Gelmont, W. Peatman, and M. Shur, “Heterodimensional Schottky metal-two dimensional electron gas interfaces,” J. Vac. Sci. Tech. B, vol. 11, pp. 1670–1674, 1993.
5. P. J. Koh, W. C. B. Peatman, and T. W. Crowe, “Millimeter wave tripler evaluation of a metal/2-DEG Schottky diode varactor,” IEEE Microwave Guided Wave Lett., vol. 5, pp. 73–75, 1995.
6. T. J. Thornton, M. Pepper, H. Ahmed, D. Andrews, and G. J. Davies, “One-dimensional conduction in the 2d electron gas of a GaAs-AlGaAs heterojunction,” Phys. Rev. Lett., vol. 56, pp. 1198–1201, 1986.
7. D. Jovanovic and J.-P. Leburton, “Quantum confinement and charge control in deep mesa etched quantum wire devices,” IEEE Electron Device Lett., vol. 14, pp. 7–9, 1993.
8. D. Hisamoto, T. Kaga, Y. Kawamoto, and E. Takeda, “A fully depleted lean-channel transistor (DELTA)—A novel vertical ultrathin SOI MOSFET,” IEEE Electron Device Lett., vol. 11, pp. 36–38, 1990.
9. K. Lee, M. Shur, T. A. Fjeldly, and T. Ytterdal, Semiconductor Device Modeling for VLSI. New Jersey: Prentice-Hall, p. 450, 1993.
10. M. Hurt, Master's thesis, University of Virginia, Charlottesville, VA, May, 1993.