Transport characterization of schottky in-plane gate al0.3ga0.7as/gaas quantum wire transistors realized by in-situ electrochemical process

Japanese Journal of Applied Physics

Volumn 34, Issue 12, 1995, Pages 6971-6976

  Okada, Hiroshi ^a   Hashizume, Tamotsu ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

2DEG; AIGaAs GaAs; Electrochemical process; In plane gate; Quantum wire; Schottky contact; Shubnikov de Haas oscillation

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; ELECTROCHEMISTRY; GATES (TRANSISTOR); HARMONIC ANALYSIS; IN SITU PROCESSING; MAGNETIC FIELDS; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WIRES; TRANSPORT PROPERTIES;

ALUMINUM GALLIUM ARSENIDE; GATE CONTROL; HARMONIC APPROXIMATION; IN SITU ELECTROCHEMICAL PROCESS; QUANTUM WIRE TRANSISTOR; SCHOTTKY IN PLANE GATE; SHUBNIKOV DE HAAS OSCILLATION; TRANSPORT CHARACTERIZATION;

FIELD EFFECT TRANSISTORS;

EID: 0029489371     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.6971     Document Type: Article

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