Sub-half-micrometer width 2-D MESFET

IEEE Electron Device Letters

Volumn 17, Issue 2, 1996, Pages 40-42

  Peatman, W C B ^a,b,c   Tsai, R ^b   Ytterdal, T ^a,b   Hurt, M ^b   Park, H ^b   Gonzales, J ^b   Shur, M ^a,b  

^a IEEE

^b University of Virginia   (United States)

^c UNIVERSITY OF VIRGINIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL INTEGRATED CIRCUITS; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE; VOLTAGE MEASUREMENT;

CHANNEL WIDTHS; DRAIN INDUCED BARRIER LOWERING; LOW POWER DIGITAL ELECTRONICS; NARROW CHANNEL EFFECT; NOISE MARGIN; SATURATION VOLTAGE; SUBTHRESHOLD IDEALITY FACTOR; SWITCHING VOLTAGE; THRESHOLD VOLTAGE;

MESFET DEVICES;

EID: 0030085794     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.484117     Document Type: Article

References (5)

1. W. C. B. Peatman, B. Gelmont, W. J. Grimm, H. Park, M. Shur, E. R. Brown, and M. J. Rooks, "Heterodimensional Schottky-gate devices," in Proc. Int'l. Semic. Dev. Res. Symp. 1993, pp. 427-430.
2. W. C. B. Peatman, H. Park, and M. Shur, "Two-dimensional metal-semiconductor field effect transistor for ultra low power circuit applications," IEEE Electron Device Lett., vol. 15, pp. 245-247, 1994.
3. W. C. B. Peatman, M. J. Hurt, H. Park, T. Ytterdal, R. Tsai, and M. Shur, "Narrow channel 2-D MESFET for low power electronics," IEEE Trans. Electron Devices, vol. 42, pp. 1569-1573, 1995.
4. W. C. B. Peatman, M. Hurt, H. Park, R. Tsai, T. Ytterdal, J. Gonzales, and M. Shur, "Scaling of 2-D MESFET's for ultra low power application," in Dig. 53rd Ann. Dev. Res. Conf., Charlottesville, VA, 1995, pp. 30-31.
5. K. Lee, M. Shur, T. A. Fjeldly, and T. Ytterdal, Semiconductor Device Modeling for VLSI. Englewood Cliffs, NJ: Prentice Hall, 1993, p. 450.