Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 724-727

  Meneghesso, G ^a   Neviani, A ^b   Pavesi, M ^c   Hurt, M ^c   Peatman, W C B ^c   Shur, M ^d   Canali, C ^e   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c University of Virginia   (United States)

^d RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^e UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; IONIZATION; MESFET DEVICES;

BIAS CONDITIONS; BIPOLAR EFFECTS; DC MEASUREMENTS; MESFETS; ON-STATE BREAKDOWN; OUTPUT CHARACTERISTICS; OUTPUT CONDUCTANCE;

IMPACT IONIZATION;

EID: 33747152369     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194531     Document Type: Conference Paper

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6. J. P. Colinge Silicon-on-Insulator Technology: Materials to VLSI , Kluwer Academic. Pub. p. 146, 1991.