Novel heterodimensional diodes and transistors

Solid State Electronics

Volumn 38, Issue 9, 1995, Pages 1727-1730

  Shur, M S ^a   Peatman, W C ^a   Park, H ^a   Grimm, W ^a   Hurt, M ^a  

^a UNIVERSITY OF VIRGINIA   (United States)

Author keywords

2DEG; MESFET; Schottky; tunneling

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON TUNNELING; GATES (TRANSISTOR); MESFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSCONDUCTANCE;

SCHOTTKY GATED RESONANT TUNNELING TRANSISTOR; TWO DIMENSIONAL ELECTRON GAS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0029378379     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00038-U     Document Type: Article

References (13)

1. Heterodimensional Schottky metal–two-dimensional electron gas interfaces
2. A novel Schottky/2-DEG diode for millimeter- and submillimeter-wave multiplier applications