Time dependent dielectric breakdown characteristics of MOS capacitors with Si-implanted SiO2

Solid-State Electronics

Volumn 39, Issue 10, 1996, Pages 1427-1434

  Matsuda, Toshihiro ^a   Ohzone, Takashi ^a   Hori, Takashi ^b  

^a TOYAMA PREFECTURAL UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ION IMPLANTATION; MOS DEVICES; SILICA; STRESSES;

CURRENT STRESS; TIME DEPENDENT DIELECTRIC BREAKDOWN;

CAPACITORS;

EID: 0030268891     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00057-3     Document Type: Review

References (15)

1. A. Kalnitsky, A. R. Boothroyd and J. P. Ellul, IEDM Tech. Dig. 516 (1988).
2. A. Kalnitsky, A. R. Boothroyd and J. P. Ellul, Solid-St. Electron. 33, 893 (1990).
3. B. Maiti and J. C. Lee, IEEE Electron Device Lett. 13, 624 (1992).
4. L. Dori, A. Acovic, D. J. DiMaria and C. Hsu, IEEE Electron Device Lett. 14, 283 (1993).
5. D. J. DiMaria, D. M. Dong, F. L. Pesavento, C. Lam and S. D. Brorson, J. Appl. Phys. 55, 3000 (1984).
6. A. Kalnitsky, A. R. Boothroyd, J. P. Ellul, E. H. Poindexter and P. J. Caplan, Solid-St. Electron. 33, 523 (1990).
7. M. Hao, H. Hwang and J. C. Lee, Appl. Phys. Lett. 62, 1530 (1993).
8. T. Hori, T. Ohzone, Y. Odake and J. Hirase, IEDM Tech. Dig. 469 (1992).
9. S. Minami and Y. Kamigaki, IEEE Trans. Electron devices 40, 2011 (1993).
10. T. Ohzone and T. Hori, Solid-St. Electron. 37, 1771 (1994).
11. T. Ohzone and T. Hori, IEICE Trans. Electron. E77-C 952 (1994).
12. T. Ohzone, A. Michii and T. Hori, Solid-St. Electron. 38, 1165 (1995).
13. D. R. Wolters and H. L. Peek, Solid-St. Electron. 30, 835 (1987).
14. K. Yoneda, K. Hagiwara and Y. Todokoro, J. Electrochem. Soc. 142, 1619 (1995).
15. 2 System, Elsevier, Amsterdam (1988).