Nucleation and growth behavior for GaN grown on (0001) sapphire via multistep growth approach

Journal of Electronic Materials

Volumn 26, Issue 10, 1997, Pages 1114-1117

  Kobayashi, J T ^a   Kobayashi, N P ^a   Dapkus, P D ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

GaN; Hall measurement; Metalorganic chemical vapor deposition (MOCVD); Sapphire substrate; X ray diffraction (XRD)

Indexed keywords

COALESCENCE; DESORPTION; HALL EFFECT; MAGNETIC VARIABLES MEASUREMENT; MASS TRANSFER; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NUCLEATION; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS; GALLIUM NITRIDE; MULTISTEP GROWTH APPROACH; THREE DIMENSIONAL ISLANDS (TTI);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031257368     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0004-0     Document Type: Article

References (8)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Appl. Phys. Lett. 68, 3269 (1996).
2. H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns, J. Appl.Phys. 76, 1363 (1994).
3. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
4. S. Nakamura, Jpn. J. Appl. Phys. 30, L1705 (1991).
5. H. Amano, I. Akasaki, K. Hiramatsu, N. Koide and N. Sawaki, Thin Solid Films 163, 415 (1988).
6. K. Hiramatsu, S. Itoh, H. Amano, I. Akasaki, N. Kuwano, T. Shiraishi and K. Oki, J. Cryst. Growth 115, 633 (1991).
7. J.T. Kobayashi, N.P. Kobayashi, X. Zhang, D.H. Rich and P.D. Dapkus, presented at MRS 1997 spring meeting.
8. R. Niebuhr, K. Bachem, K. Dombrowski, M. Maier, W. Pletschen and U. Kaufmann, J.Electron. Mater. 24, 1531 (1995).